Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.

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IRF630 Datasheet

Repetitive rating; pulse width limited by maximum junction temperature see fig. Case-to-Sink, Flat, Greased Surface. View PDF for Mobile.

This datasheet is subject to change without notice. Prev Next General features.

Drain-Source Body Diode Characteristics. Unclamped Inductive load test circuit Figure The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.

Electrical characteristics Figure Unclamped inductive waveform Figure The maximum ratings related to soldering conditions are also marked on the inner box label. L S die contact.


All other trademarks are the property of their respective owners. Pulsed Diode Forward Current a. Download datasheet Kb Share this page. Switching times test circuit for resistive load Figure Thermal impedance for TO Figure 4. IRF datasheet and specification datasheet.

Gate charge vs gate-source voltage Figure Operating Junction and Storage Temperature Range. IRF datasheet and specification datasheet Download datasheet.

irf equivalent datasheet & applicatoin notes – Datasheet Archive

These packages have a Lead-free second level interconnect. Elcodis is a trademark of Elcodis Company Ltd.

Contents Contents 1 Electrical ratings. Safe operating area for TO Figure 3. Body Diode Reverse Recovery Time. Repetitive Avalanche Current a.

Irf Datasheet, China Irf Datasheet Suppliers Directory on

Single Pulse Avalanche Energy b. Zero Gate Voltage Drain Current. Copy your embed code and put on your site: Body Diode Reverse Recovery Charge. Continuous Source-Drain Diode Current. The low thermal resistance. Repetitive Avalanche Energy a. Soldering Recommendations Peak Temperature.


Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure Vishay Intertechnology Electronic Components Datasheet.

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Capacitance datasheett Figure