FLOWABLE CVD PDF

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The Producer Eterna flowable CVD (FCVD) tool provides a bottoms up, void-free fill in memory and logic designs at nm and below. Low k C-doped oxide (kflowable chemical vapor deposition (FCVD) reactor for W inter-metallic dielectrics (TMD). Quantitative Electron Energy Loss Spectroscopy (EELS) Analysis of Flowable CVD. Oxide for Shallow Trench Isolation of finFET Integration. J. Li1, J. Bruley2.

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Influence of plasma enhanced atomic layer deposition aluminum nitride with various plasma powers. Electronic books The e-book database EBC.

Applied Materials Enables Advanced Microchip Designs with Breakthrough Flowable CVD Technology

Examples of suitable ranges of b. For those embodiments relating to a composition comprising a solvent s and at least one silicon-containing compound described herein, the solvent or mixture thereof selected does not react with the silicon compound.

In liquid delivery formulations, the precursors described herein may be delivered in neat liquid form, or alternatively, may be employed in solvent formulations or compositions comprising same.

The flowability and gap fill effects on patterned wafers were observed by a cross-sectional Scanning Electron Microscopy SEM using a Hitachi S system at a resolution of 2. European Patent Office In certain embodiments, a pre-anneal step is performed to allow the film to be more SiN-like.

The alkyl group may be saturated or, alternatively, unsaturated. The precursor of claim 12 further comprising at least one oligomer of at least one of the silicon containing compounds.

In embodiments lfowable the silicon-containing precursor comprises a compound flowablle Formula I c: Limit the search to the library catalogue. In certain embodiments, the reactor is at a pressure below atmospheric pressure or torr 10 5 Pascals Pa or less, or torr Pa or less. Such films are also not suitable for low-k film applications. In embodiments wherein the silicon-containing precursor comprises a compound having Formula I c:.

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After curing the flowable liquid oligomer forms a solid carbon doped porous OSG. In the presence of the plasma energy, the silicon-containing compounds react with each other and form oligomers which condense as a liquid liquid oligomers on the surface of the substrate and at least partially fill the features on the substrate.

In certain embodiments, any one or more of substituents R 1R 2and R 3 in the formulae described above can be linked with a C—C bond in the above formula to form a ring structure when they are not hydrogen. Films with RI of 1. This Application claims the benefit of Application No.

For example, the addition of carbon to the network may lower the dielectric constant of the resultant film. In embodiments wherein the deposition involves plasma, the plasma-generated process may comprise a direct plasma-generated process in which plasma is directly generated in the reactor, or alternatively a remote plasma-generated process in which plasma is generated outside of the reactor and supplied into the reactor.

In one embodiment of the invention, at least one of the following films or features can be formed or deposited upon the inventive silicon containing film: In some embodiments, the substrate may be a single crystal silicon wafer, a wafer of silicon carbide, a wafer of aluminum oxide sapphirea sheet of glass, a metallic foil, an organic polymer film or may be a polymeric, glass, silicon or metallic 3-dimensional article.

Such films are not suitable for low-k film applications. Studies of photo resist profile improvement in 28 nm implanting layer’s lithography process without BARC. The silicon-containing film is selected from the group consisting of a silicon nitride, a silicon carbide, a silicon oxide, a carbon-doped silicon nitride, a silicon oxynitride, and a carbon-doped silicon oxynitride film.

An exemplary flowable CVD reactor is disclosed in U.

Flowable CVD Process Application for Gap Fill at Advanced Technology

The ensuing detailed description provides preferred exemplary embodiments only, and is not intended to limit the scope, applicability, or configuration of the invention. In addition, the aforementioned reagents should be substantially free of chloride impurities such that the resulting crude product is substantially free of chloride impurities.

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In some case, the vaporized precursors ccvd pass through a plasma generator. The method used to form the films or coatings fpowable herein are flowable chemical deposition processes. Examples of compounds of Formula I a include diacetoxydimethylsilane, diacetoxymethylsilane, triacetoxymethylsilane, diacetoxydivinylsilane, diacetoxymethylvinylsilane, triacetoxyvinylsilane, diacetoxydiethynylsilane, diacetoxymehylethynylsilane, and triacetoxyethynylsilane.

The method of claim 1 wherein the plasma is selected from the group consisting of an in-situ or remote plasma source based plasma comprising carbon or hydrocarbon, an in-situ or remote plasma source based plasma comprising hydrocarbon and helium, an in-situ or remote plasma source based plasma comprising hydrocarbon and argon, an in-situ or flowalbe plasma source based plasma comprising carbon dioxide, an in-situ or remote flodable source based plasma comprising carbon monoxide, an in-situ or remote plasma source based plasma comprising a foowable and hydrogen, an in-situ or remote plasma source based plasma comprising a hydrocarbon and nitrogen, an in-situ or remote plasma source based plasma comprising hydrocarbon and oxygen, and mixture thereof.

Adsorption may also be used to take advantage of the differential adsorptive properties of the components to effect separation such that the final product is substantially free of halide.

The method of claim 1 wherein the acyloxyaminoxysilane having the Formula I c: Described herein is a process for the fabrication of an electronic device. Careers and apprenticeships Equal opportunities Vacancies Apprenticeships.