Cycle-by-cycle shut- down is programmed by an external capacitor which directly controls the time interval between detection. Data Sheet No. PDK. IR IC MOSFET DRIVER LOW-SIDE 8-DIP International Rectifier datasheet pdf data sheet FREE from Datasheet (data sheet) search for. IR Single Low Side Driver, Current Limiting, Programmable Shutdown Error Pin in a 8-pin Dip Package. Features. Gate drive supply range from to 18V.

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ERR to Output Shutdown vs. All voltage parameters are absolute voltages referenced to COM. Find an answer to your question. The VS offset rating is tested with all supplies biased at 15V differential. You will receive a confirmation E-mail to validate your address in our system. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible. The output driver features a high pulse current buffer stage designed for minimum cross-conduction.


Maximum VS Negative Offset vs. VCC Supply Current vs. Watch our introduction video and become familiar with our product portfolio. In order to optimize your browsing experience Infineon uses cookies.

Low Level Output vs. An Introduction to Infineon Gate Drivers www. CS to Output Shutdown vs. Switching Time Waveform Definitions Figure 4. If you have any questions concerning our products, please fill out the following form.

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Turn-On Rise Time vs. Output Source Current vs. Gate drive supply range from 12 to 18 V Undervoltage lockout Current detection and limiting loop to limit driven power transistor current Error lead indicates fault conditions and programs shutdown time Output in phase with input 2.

IR Datasheet(PDF) – International Rectifier

Temperature 16 18 20 Figure 7B. Temperature 16 18 20 Figure 10B. Temperature B 16 Figure 11B. VCC Undervoltage – vs.

Single Low Side Driver, Current Limiting, Programmable Shutdown Error Pin In A 8-pin DIP Package

Voltage Max. For more information regarding cookies and the processing of your personal data please read our Privacy Policy. Low Side Driver IC with typical 1. The dynamic electrical characteristics are defined in Figures 2 through 5. CS Input Threshold – vs. Temperature 18 20 5. Cycle-by-cycle shutdown is programmed by an external capacitor which ratasheet controls the time interval between detection of the over-current limiting condition and latched shutdown.


Input Temperature Figure 32B. High Level Output vs. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage.

Temperature 18 20 2. Output Sink Current vs. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.

For proper operation the device should be used within the recommended conditions. Latch immune CMOS technology enables ruggedized monolithic construction. Turn-Off Fall Time vs.